| PART |
Description |
Maker |
| IRG4PSC71KD |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V Vce(on)typ.=1.83V @Vge=15V Ic=60A)
|
International Rectifier IRF[International Rectifier]
|
| MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| GA200SA60S |
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRGBC30UD2 |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRGBF30F |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRG4P254S |
INSULATED GATE BIPOLAR TRANSISOR
|
International Rectifier
|